050-4952 b 3-2010 maximum ratings all ratings: t c = 25c unless otherwise speci ed. rf power mosfet n - channel push - pull pair 165v 400w 100mhz the arf477fl is a matched pair of rf power transistors in a common source con guration. it is designed for high voltage push-pull or parallel operation in narrow band ism and mri power ampli ers up to 100 mhz. ? speci ed 150 volt, 65 mhz characteristics: ? output power = 400 watts ? gain = 15db (class ab) ? ef ciency = 50% min ? high performance push-pull rf package. ? high voltage breakdown and large soa for superior ruggedness. ? low thermal resistance. ? rohs compliant arf477fl common source push-pull pair g g d s s s s d microsemi website - http://www.microsemi.com arf477fl symbol parameter ratings unit v dss drain-source voltage 500 v v dgo drain-gate voltage 500 i d continuous drain current @ t c = 25c (each device) 15 a v gs gate-source voltage 30 v p d total power dissipation @ t c = 25c 750 w t j , t stg operating and storage junction temperature range -55 to 175 c t l lead temperature: 0.063? from case for 10 sec. 300 static electrical characteristics symbol parameter min typ max unit bv dss drain-source breakdown voltage (v gs = 0v, i d = 250 a) 500 v v ds(on) on state drain voltage 1 (i d(on) = 7.5a, v gs = 10v) 2.9 4 i dss zero gate voltage drain current (v ds = v dss , v gs = 0v) 25 a zero gate voltage drain current (v ds = 50v dss , v gs = 0, t c = 125c) 250 i gss gate-source leakage current (v gs = 30v, v ds = 0v) 100 na g fs forward transconductance (v ds = 15v, i d = 7.5a) 3.5 5.6 8 mhos g fs1 /g fa2 forward transconductance match ratio (v ds = 15v, i d = 5a) 0.9 1.1 v gs(th) gate threshold voltage (v ds = v gs , i d = 50ma) 35 v gs(th) gate threshold voltage match (v ds = v gs , i d = 50ma) 0.2 volts caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. symbol parameter min typ max unit r jc junction to case 0.18 0.2 c/w r jhs junction to sink (high ef ciency thermal joint compound and planar heat sink surface.) 0.30 0.32 thermal characteristics
050-4952 b 3-2010 0.10 1.00 10.00 56.00 1 5 10 50 100 500 dynamic characteristics (per section) arf477fl 16 12 8 4 0 2 4 6 8 10 capacitance (pf) v ds , drain-to-source voltage (volts) figure 2, typical capacitance vs. drain-to-source voltage 5000 1000 500 100 50 10 .1 .5 1 5 10 50 150 i d , drain current (amperes) v ds , drain-to-source voltage (volts) figure 4, typical maximum safe operating area v gs , gate-to-source voltage (volts) figure 3, typical transfer characteristics i d , drain current (amperes) v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle t j = -55c t j = -55c t j = +125c t j = +25c t c =+25c t j =+150c single pulse operation here limited by r ds (on) c iss c oss c rss v ds , drain-to-source voltage (volts) figure 1, typical output characteristics 25 20 15 10 5 0 0 5 10 15 20 25 30 i d , drain current (amperes) 6.5v 5.5v 6v 7v v gs =15 & 10v 9v 8v 4.5v 5v symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v 1200 1400 pf c oss output capacitance v ds = 150v f = 1mhz 150 180 c rss reverse transfer capacitance 60 75 t d(on) turn-on delay time v gs = 15v v dd = 250v i d = i d[cont.] @ 25c r g = 1.6 7 ns t r rise time 6 t d(off) turn-off delay time 20 t f fall time 4.0 7 functional characteristics symbol characteristic test conditions min typ max unit g ps common source ampli er power gain f = 65mhz i dq = 0ma v dd = 150v p out = 400w 14 16 db drain ef ciency 50 55 % electrical ruggedness vswr 10:1 no degradation in output power 1. pulse test: pulse width < 380 s, duty cycle < 2%. microsemi reserves the right to change, without notice, the speci cations and information contained herein.
050-4952 b 3-2010 arf477fl figure 5b, transient thermal impedance model 0 0.05 0.10 0.15 0.20 0.25 10 -5 10 -4 10 -3 10 -2 10 1.0 -1 z jc , thermal impedance (c/w) 0.3 d = 0.9 single pulse rectangular pulse duration (seconds) figure 5a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: 0.7 dissipated power (watts) t j (?c) t c (?c) z ext are the external thermal impedances: case to sink, sink to ambient, etc. set to zero when modeling only the case to junction. z ext .0915 .108 .0111f .133f freq. (mhz) z in ( )z out ( ) 40 60 80 1.5 - j 10 1.9 - j 1.3 2.2 - j 0.82 24 - j 37 13 - j 29 7.9 - j 24 z in - gate shunted with 100 i dq = 0 z ol - conjugate of optimum load for 400 watts output at v dd =125v
050-4952 b 3-2010 arf477fl 1.500 .300 .200 .005 .040 arf477fl .175 .175 .150 .150 .100 .100 .100 .320 .320 +/- .010 .570 1.250 .320 .125dia 4 pls .125r 4 pls .080 1.000 hazardous material warning the white ceramic portion of the device between leads and mounting surface is beryllium oxide, beo. beryllium oxide dust is toxic when inhaled. care must be taken dur- ing handling and mounting to avoid damage to this area. these devices must never be thrown away with general industrial or domestic waste. thermal considerations and package mounting: the rated power dissipation is only available when the package mounting surface is at 25c and the junction temperature is 175c. the thermal resistance between junctions and case mounting sur- face is 0.23 c/w. when installed, an additional thermal impe- dance of 0.07c/w between the package base and the mounting surface is typical. insure that the mounting surface is smooth and flat. thermal joint compound must be used to reduce the effects of small surface irregularities. use the minimum amount necessary to coat the surface. the heatsink should incorporate a copper heat spreader to obtain best results. the package design clamps the ceramic base to the heatsink. a clamped joint maintains the required mounting pressure while al- lowing for thermal expansion of both the base and the heat sink. four 4-40 (m3) screws provide the required mounting force. t = 6 in-lb (0.68 n-m). microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved. 65mhz test circuit
|
